NVM Reliability R&D Engineer (SK) bei Intel


Job ID: JR0168246
Job Category: Engineering
Primary Location: Folsom, CA US
Other Locations:
Job Type: College Grad

NVM Reliability R&D Engineer (SK)

Job Description
This position is associated with the sale of Intel's NAND memory and storagebusiness to SK hynix (You can read more about the transaction in the press release - https://newsroom.intel.com/wp-content/uploads/sites/11/2020/10/nand-memory-news-q-a.pdf). The transaction will enhance the resources and potential of the business' storage solutions, including client and enterprise SSDs, in the rapidly growing NAND Flash space amid the era of big data.
This is an exciting time to be at Intel - come join our Technology Development Reliability team as a Non-Volatile Memory(NVM Reliability R&D Engineer and work on one of the most advanced 3DNAND and SSD technology portfolios in the world. As the global leader in the semiconductor industry, Intel possesses many industry-leading SSD technologies including the most capable Quadruple Level Cell (QLC) NAND Flash products. As NVM Reliability R&D Engineer, you will be part of a world-class team that will transition to lead the SSD business at SK hynix.
This position aligns to Phase 2 of the transaction, which includes NAND technology and component development along with fab operations. Employees aligned to Phase 2 will continue to be employed by Intel and will continue to develop NAND technology and components and manufacture NAND wafers at the fab. Phase 2 of the transaction is expected to close in March 2025, at which time employees aligned to this phase of the transaction will transition employment to SK hynix.
Your responsibilities will include but not limited to:
  • Designing and executing experiments to identify, segment, characterize and model NVM reliability mechanisms.
  • Developing empirical and physics-based predictive reliability modeling methods and tools for reliability risk assessments.
  • Developing new acceleration techniques, test methods and analytical tools to provide fast and effective feedback for reliability process optimization.
  • Determining reliability requirements and technology targets of components and systems to achieve company, customer and other reliability objectives.
  • Influencing design, process, product, test and/or system solutions in order to enable aggressive scaling of Intel's NVM technologies and exploration of novel memory cells.
  • Developing the appropriate process- and product-qualification stress methods and criteria.
  • You may be expected to lead small cross-functional and cross-company groups of engineers on multi-disciplinary technical projects to solve complex reliability issues- such as, during technology development and ramp to high-volume manufacturing.

The ideal candidate should exhibit behavioral traits:
  • Systematic analytical problem solving.
  • Creativity and innovation in solving technical problems.
  • Affinity for cross-disciplinary work performance skills.
  • Demonstrated attention to details and quality of the work.
  • Persistence and commitment to task.
  • Clearly communicate achieved results and to influence wide range of audiences.

Qualifications
You must possess the below minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates. Experience listed below would be obtained through a combination of your schoolwork/classes/research and/or relevant previous job and/or internship experiences.
Minimum Qualifications:
  • The candidate must possess a Master of Science or Ph.D. degree in Electrical Engineering, Computer Engineering, Materials Science, Physics or related field of study.

Minimum 2+ years of experience in the following areas:
  • Semiconductor device physics and materials science.

Minimum of 6+ months of experience in the following areas:
  • Probability and statistics, VLSI circuit design, semiconductor processing, and quantum physics.
  • Experimental design, execution, and data analysis, interpretation and synthesis.
  • Programming (C or C++, PERL or Python...).

Preferred Qualifications:
Minimum of 6+ months of experience in the following areas:
  • CMOS transistor level circuit design, semiconductor device physics/engineering, memory reliability, interconnect reliability, computer or digital systems.
  • Non-volatile memories, especially product or reliability.
  • A range of analytical lab test equipment such as Logic analyzer/oscilloscopes, semiconductor parametric analyzer (CV-IV), memory testers.
  • Reliability failure statistics, physics, or failure mechanisms.
  • Statistical analysis packages (e.g. JMP).
  • Computer programming for testing, preferably of memories , and data acquisition, reduction and analysis.
  • Semiconductor fabrication process, packaging assembly, and/or board system technology operation.
Inside this Business Group
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.
Posting Statement
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.
USCollege GradJR0168246Folsom

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